Details

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BUY 6N90C https://www.utsource.net/itm/p/12606157.html

Below is the parameter table and instructions for the 6N90C phototransistor:

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	30	-	V
Emitter-Collector Voltage	VEC	-	5	-	V
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.2	-	V
Collector Current	IC	-	50	-	mA
Base-Emitter Voltage	VBE	-	1.2	-	V
Base Current	IB	-	1	-	mA
Forward Current Transfer Ratio	hfe	100	300	500	-
Dark Current	ID	-	0.1	-	渭A
Peak Inverse Voltage	VPIV	-	30	-	V
Operating Temperature	Top	-40	-	85	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions

1. Handling and Storage:

   • Handle the 6N90C with care to avoid mechanical damage.
   • Store in a dry place within the temperature range of -55掳C to 150掳C.

2. Mounting:

   • Ensure proper alignment and orientation during mounting.
   • Use a heat sink if operating at high currents to prevent overheating.

3. Biasing:

   • Connect the collector to the positive supply and the emitter to ground.
   • Apply a suitable base current to control the collector current.

4. Operation:

   • Operate within the specified voltage and current limits to ensure reliable performance.
   • Avoid exceeding the maximum ratings to prevent damage.

5. Testing:

   • Measure the collector-emitter saturation voltage (V_CE(sat)) under typical operating conditions.
   • Verify the forward current transfer ratio (h_fe) to ensure it falls within the specified range.

6. Applications:

   • Suitable for optocouplers, signal isolation, and switching applications.
   • Ideal for use in circuits requiring high sensitivity and low dark current.

7. Safety:

   • Do not exceed the maximum ratings for any parameter.
   • Ensure proper ventilation and cooling if operating at high temperatures or currents.

By following these instructions, you can ensure optimal performance and longevity of the 6N90C phototransistor.

(For reference only)