Details

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BUY 2SB718 https://www.utsource.net/itm/p/12606175.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	V(BR)CEO	60	V
Collector-Base Voltage	V(BR)CBO	75	V
Emitter-Base Voltage	V(BR)EBO	5	V
Collector Current	IC	1.5	A
Base Current	IB	0.15	A
Power Dissipation	PD	125	mW
Forward Current Transfer Ratio (hFE)	-	300 to 800	-
Junction Temperature	TJ	-55 to 150	掳C

Instructions for Use:

1. Mounting: Ensure the transistor is mounted in a way that allows adequate heat dissipation if operating near its maximum power dissipation.
2. Biasing: Apply bias voltages carefully to avoid exceeding the maximum ratings for V(BR)CEO, V(BR)CBO, and V(BR)EBO.
3. Current Handling: Do not exceed the specified collector current (IC) and base current (IB) limits to prevent damage.
4. Temperature Consideration: Operate within the specified junction temperature range to ensure reliable performance.
5. Storage: Store in a dry place away from direct sunlight and sources of heat when not in use.

(For reference only)