Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | Flash Memory | 16M-Bit |
| Organization | x8 / x16 | 2M x 8, 1M x 16 |
| Voltage (Vcc) | Supply Voltage | 3.0 V to 3.6 V |
| Access Time | Standard Access Time | 70 ns |
| Package Type | Packaging | TSOP-I, TSOP-II |
| Temperature Range | Operating Temperature | -40掳C to +85掳C |
| Interface | Communication Interface | SPI |
| Write Cycle Time | Time required for a write cycle | 4 ms |
| Block Erase Time | Time required for block erasure | 30 ms (typical) |
| Chip Erase Time | Time required for chip erasure | 60 s (maximum) |
| Endurance | Number of write/erase cycles | 100,000 cycles |
| Data Retention | Period data is retained without power | 10 years |
Instructions:
Power Supply:
- Ensure the supply voltage (Vcc) is within the specified range of 3.0 V to 3.6 V.
Initialization:
- Before performing any read/write operations, initialize the device according to the datasheet guidelines.
Read Operations:
- Use standard read commands compatible with the interface type (SPI).
Write Operations:
- Perform a write enable command before initiating any write or erase operation.
- Wait for the write cycle time (4 ms) to complete before starting a new operation.
Erase Operations:
- For block erasure, use the block erase command and wait for the typical time of 30 ms.
- For full chip erasure, use the chip erase command and allow up to 60 seconds for completion.
Operating Temperature:
- Ensure that the operating temperature remains within -40掳C to +85掳C to maintain reliability.
Handling Precautions:
- Handle the device with care to avoid electrostatic discharge (ESD) damage.
- Follow all storage and handling instructions provided in the datasheet.
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