AM29LV160DT-70FI

AM29LV160DT-70FI


Specifications
Details

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Parameter Description Value
Device Type Flash Memory 16M-Bit
Organization x8 / x16 2M x 8, 1M x 16
Voltage (Vcc) Supply Voltage 3.0 V to 3.6 V
Access Time Standard Access Time 70 ns
Package Type Packaging TSOP-I, TSOP-II
Temperature Range Operating Temperature -40掳C to +85掳C
Interface Communication Interface SPI
Write Cycle Time Time required for a write cycle 4 ms
Block Erase Time Time required for block erasure 30 ms (typical)
Chip Erase Time Time required for chip erasure 60 s (maximum)
Endurance Number of write/erase cycles 100,000 cycles
Data Retention Period data is retained without power 10 years

Instructions:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 3.0 V to 3.6 V.
  2. Initialization:

    • Before performing any read/write operations, initialize the device according to the datasheet guidelines.
  3. Read Operations:

    • Use standard read commands compatible with the interface type (SPI).
  4. Write Operations:

    • Perform a write enable command before initiating any write or erase operation.
    • Wait for the write cycle time (4 ms) to complete before starting a new operation.
  5. Erase Operations:

    • For block erasure, use the block erase command and wait for the typical time of 30 ms.
    • For full chip erasure, use the chip erase command and allow up to 60 seconds for completion.
  6. Operating Temperature:

    • Ensure that the operating temperature remains within -40掳C to +85掳C to maintain reliability.
  7. Handling Precautions:

    • Handle the device with care to avoid electrostatic discharge (ESD) damage.
    • Follow all storage and handling instructions provided in the datasheet.
(For reference only)

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