Details

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BUY BUZ900 https://www.utsource.net/itm/p/12606210.html

Parameter	Description	Value	Unit
VDSS	Drain-Source Voltage	60	V
ID	Continuous Drain Current	12	A
PD	Total Power Dissipation	54	W
RDS(on)	On-State Resistance at 25掳C	0.018	惟
VGS(th)	Gate Threshold Voltage	2 to 4	V
Qg	Total Gate Charge	79	nC
tr	Turn-On Delay Time	13	ns
tf	Turn-Off Delay Time	28	ns

Instructions for BUZ900:

1. Handling Precautions:

   • Use proper ESD (Electrostatic Discharge) protection when handling the BUZ900.
   • Avoid exposing the device to high temperatures and moisture.

2. Mounting:

   • Ensure that the mounting surface is clean and free from contaminants.
   • Apply appropriate thermal paste if using a heatsink to ensure good thermal conductivity.

3. Biasing:

   • The gate voltage should be within the specified VGS(th) range to ensure reliable operation.
   • Keep the gate-source voltage (VGS) within the absolute maximum ratings to prevent damage.

4. Operation:

   • Operate the device within the specified drain-source voltage (VDSS) and continuous drain current (ID) limits.
   • Monitor the power dissipation (PD) to avoid overheating.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Follow recommended storage conditions to maintain device integrity.

(For reference only)