Details

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BUY IR2106S https://www.utsource.net/itm/p/12606215.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Supply Voltage	VCC	10	-	20	V	-
Under Voltage Lockout	UVLO	8.5	-	-	V	-
High-Side Floating Range	VBS	5.5	-	600	V	-
Input High Voltage	VIH	2.0	-	20	V	-
Input Low Voltage	VIL	-	-	0.8	V	-
Output High Voltage	VOH	-	14.5	17	V	VCC = 15V, IOL = 1mA
Output Low Voltage	VOL	-	0.3	1.5	V	VCC = 15V, IOH = 100mA
High-Side Drive Current	IHSD	-	2	3.5	A	VCC = 15V, VOH = 15V
Low-Side Drive Current	ILSD	-	2	3.5	A	VCC = 15V, VOH = 15V
Propagation Delay Time	td	30	50	80	ns	VCC = 15V, VIN = 5V, RL = 1k惟
Shutdown Current	ISD	-	10	20	渭A	VCC = 15V, Shutdown mode

Instructions for Using the IR2106S:

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the range of 10V to 20V to avoid damage or improper operation.

2. Under Voltage Lockout (UVLO):

   • The device will not operate if the supply voltage drops below 8.5V. This feature protects against low-voltage conditions that could cause erratic behavior.

3. High-Side Floating Range (V_BS):

   • The high-side driver can operate with a floating voltage range from 5.5V to 600V. This allows the device to drive high-side MOSFETs in bridge circuits.

4. Input Voltage Levels:

   • The input high voltage (V_IH) should be at least 2.0V, and the input low voltage (V_IL) should not exceed 0.8V to ensure proper logic levels.

5. Output Voltage Levels:

   • The output high voltage (V_OH) is typically 14.5V when V_CC is 15V, and the output low voltage (V_OL) is typically 0.3V under the same conditions.

6. Drive Current:

   • Both the high-side and low-side drivers can provide up to 3.5A of current, with typical values around 2A. Ensure your load does not exceed these limits.

7. Propagation Delay Time (t_d):

   • The propagation delay time is the time it takes for the output to respond to an input change. It ranges from 30ns to 80ns under typical operating conditions.

8. Shutdown Mode:

   • When the device is in shutdown mode, the current consumption is minimized to between 10渭A and 20渭A. Use this mode to reduce power consumption when the device is not in use.

9. Circuit Design:

   • Ensure proper decoupling capacitors are placed close to the V_CC and GND pins to stabilize the supply voltage and reduce noise.
   • Use appropriate gate resistors to control the switching speed of the MOSFETs and minimize switching losses.

10. Thermal Management:

    • The IR2106S is designed to handle typical power dissipation in most applications. However, for high-power applications, ensure adequate heat sinking to maintain the junction temperature within safe limits.

By following these guidelines, you can effectively use the IR2106S in your designs for driving high-side and low-side MOSFETs in various power electronics applications.

(For reference only)