Details

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BUY M95640-WMN6P https://www.utsource.net/itm/p/12606218.html

Parameter	Description	Value
Part Number	Product Identification	M95640-WMN6P
Type	Memory Type	EEPROM
Capacity	Storage Capacity	64 Kbit (8 KByte)
Organization	Memory Organization	8192 x 8-bit
Interface	Communication Protocol	I2C
Operating Voltage	Supply Voltage Range	1.7V to 5.5V
Operating Temperature	Temperature Range for Operation	-40掳C to +85掳C
Write Cycle Time	Time to Write a Byte	5 ms
Data Retention	Data Retention Time	100 years
Endurance	Number of Write/Erase Cycles	1,000,000
Package	Physical Package Type	6-lead TDFN
Dimensions	Package Size	2.0 x 1.25 mm
Height	Package Height	0.75 mm
Pin Configuration	Pinout	VSS, SDA, SCL, WP, NC, VDD
Standby Current	Current Consumption in Standby Mode	1 渭A (max)
Active Current	Current Consumption During Active Operation	3 mA (max)

Instructions

1. Power Supply:

   • Connect the VDD pin to the positive supply voltage (1.7V to 5.5V).
   • Connect the VSS pin to ground.

2. Communication:

   • Connect the SDA and SCL pins to the I2C bus lines.
   • Ensure that the I2C bus lines are pulled up to VDD using appropriate pull-up resistors (typically 4.7k惟).

3. Write Protection:

   • The WP pin can be used to enable or disable write protection.
   • Connect the WP pin to VDD to enable write protection.
   • Connect the WP pin to VSS to disable write protection.

4. Addressing:

   • The device has a fixed I2C address. Refer to the datasheet for the specific address.
   • Use the I2C address to communicate with the device.

5. Reading and Writing:

   • To read from the EEPROM, initiate an I2C read operation at the desired memory address.
   • To write to the EEPROM, initiate an I2C write operation at the desired memory address.
   • Ensure that the write cycle time (5 ms) is respected to avoid data corruption.

6. Handling:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry environment to prevent moisture damage.

7. Testing:

   • After installation, perform a read/write test to ensure proper functionality.
   • Verify the data retention and endurance by writing and reading back data multiple times.

For detailed information, refer to the official datasheet provided by the manufacturer.

(For reference only)