STGIB30M60TS-L

STGIB30M60TS-L


Specifications
Details

BUY STGIB30M60TS-L https://www.utsource.net/itm/p/12606231.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage V CES 600 V
Collector Current I C T C = 25掳C 30 A
Power Dissipation P T T C = 25掳C 180 W
Junction Temperature T J Operating range -55 175 掳C
Storage Temperature T STG Storage conditions -55 150 掳C
Gate Charge Q G I C = 10A, E = 400V 60 nC
Turn-on Time t on I C = 10A, V GE = 15V 90 ns
Turn-off Time t off I C = 10A, V GE = 0V 70 ns

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within operational limits.
    • Handle with care to avoid damage to the pins and body.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals correctly according to your circuit diagram.
    • Ensure that the gate drive voltage is sufficient to fully turn on the transistor.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within specified temperature ranges to ensure reliable performance.
  4. Storage:

    • Store in a dry environment within the specified storage temperature range.
    • Avoid exposure to high humidity or corrosive environments.
  5. Testing:

    • Perform initial testing at room temperature to verify correct operation.
    • Gradually increase load and environmental stress while monitoring performance parameters.
  6. Safety Precautions:

    • Always use appropriate protective equipment when handling electrical components.
    • Follow all local regulations and guidelines for electrical safety.
(For reference only)

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