Details

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BUY 2SC4517 https://www.utsource.net/itm/p/12606243.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	100	V
Emitter-Base Voltage	VEBO	-	-	6	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-	25	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	150	-	MHz

Instructions for Use:

1. Handling:

   • Handle the 2SC4517 with care to avoid damage to the leads and the semiconductor structure.
   • Use proper anti-static precautions to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure that the transistor is mounted on a suitable heat sink to dissipate the heat generated during operation.
   • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.

3. Biasing:

   • Properly bias the base-emitter junction to ensure reliable operation. The base current should be sufficient to drive the collector current but not excessive to cause overheating.
   • Use appropriate resistors to limit the base current and protect the transistor from overdrive.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table to avoid damage to the transistor.
   • Monitor the junction temperature to ensure it remains within the safe operating range.

5. Testing:

   • When testing the transistor, use a multimeter or a dedicated transistor tester to check the continuity and gain (h_FE).
   • Ensure that the test conditions do not exceed the maximum ratings.

6. Storage:

   • Store the 2SC4517 in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistors in their original packaging to protect them from static and physical damage.

(For reference only)