Details

---

BUY IRFZ44 https://www.utsource.net/itm/p/12606253.html

Below is the parameter table and instructions for the IRFZ44 N-Channel MOSFET:

IRFZ44 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	55	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	49	52	A	TC = 25掳C
Continuous Drain Current	ID	-	32	36	A	TC = 100掳C
Pulse Drain Current (tp = 10ms)	ID(p)	-	110	110	A	TC = 25掳C
Power Dissipation	Ptot	-	-	157	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	Tstg	-55	-	150	掳C
Gate Charge	QG	-	138	-	nC	VGS = 10V, ID = 20A
Input Capacitance	Ciss	-	1720	-	pF	VDS = 25V, f = 1MHz
Output Capacitance	Coss	-	480	-	pF	VDS = 25V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	680	-	pF	VDS = 25V, f = 1MHz
Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250渭A, TA = 25掳C
On-State Resistance	RDS(on)	-	0.044	0.054	惟	VGS = 10V, ID = 20A, TA = 25掳C
Turn-On Delay Time	td(on)	-	32	-	ns	VDS = 50V, ID = 20A, VGS = 10V, RG = 2惟
Rise Time	tr	-	45	-	ns	VDS = 50V, ID = 20A, VGS = 10V, RG = 2惟
Turn-Off Delay Time	td(off)	-	21	-	ns	VDS = 50V, ID = 20A, VGS = 10V, RG = 2惟
Fall Time	tf	-	34	-	ns	VDS = 50V, ID = 20A, VGS = 10V, RG = 2惟

Instructions for Use

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the gate, which is sensitive to electrostatic discharge (ESD).

2. Biasing:

   • Apply a gate-source voltage (V_GS) of at least 10V to ensure the MOSFET is fully on and has the lowest on-state resistance.
   • Keep V_GS within the specified limits to avoid damage.

3. Current Limiting:

   • Do not exceed the maximum continuous drain current (I_D) ratings.
   • For pulse applications, ensure the pulse duration and frequency are within safe operating limits.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Use appropriate heatsinks or cooling methods to dissipate heat effectively.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Keep away from static sources to avoid ESD damage.

6. Testing:

   • Use a low-inductance test setup to minimize ringing and ensure accurate measurements.
   • Test the device under controlled conditions to avoid exceeding its maximum ratings.

7. Circuit Design:

   • Use a gate resistor (R_G) to control the switching speed and reduce electromagnetic interference (EMI).
   • Consider using a gate driver circuit to provide sufficient drive current and improve performance.

By following these guidelines, you can ensure reliable and efficient operation of the IRFZ44 N-Channel MOSFET in your circuits.

(For reference only)