Details

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BUY SPW17N80C3 https://www.utsource.net/itm/p/12606322.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	800	-	V	Maximum voltage between drain and source with the gate open.
Gate-Source Voltage	VGS	-20	-	20	V	Maximum voltage between gate and source.
Continuous Drain Current (TC = 25掳C)	ID(25掳C)	-	17	-	A	Maximum continuous current through the drain to source at 25掳C case temperature.
Continuous Drain Current (TC = 100掳C)	ID(100掳C)	-	10.2	-	A	Maximum continuous current through the drain to source at 100掳C case temperature.
Pulse Drain Current (tp = 10 渭s, IGT = 10 A)	ID(pulsed)	-	68	-	A	Maximum pulsed current through the drain to source.
Power Dissipation (TC = 25掳C)	PD(25掳C)	-	170	-	W	Maximum power dissipation at 25掳C case temperature.
Power Dissipation (TC = 100掳C)	PD(100掳C)	-	68	-	W	Maximum power dissipation at 100掳C case temperature.
Junction Temperature	TJ	-	-	150	掳C	Maximum operating junction temperature.
Storage Temperature Range	TSTG	-55	-	150	掳C	Temperature range for storage and handling.
Thermal Resistance, Junction to Case	R胃JC	-	0.9	-	掳C/W	Thermal resistance from the junction to the case.
Gate Charge	QG	-	47	-	nC	Total gate charge.
Input Capacitance	Ciss	-	1750	-	pF	Input capacitance at VDS = 400 V, VGS = 0 V.
Output Capacitance	Coss	-	300	-	pF	Output capacitance at VDS = 400 V, VGS = 0 V.
Reverse Transfer Capacitance	Crss	-	200	-	pF	Reverse transfer capacitance at VDS = 400 V, VGS = 0 V.
On-State Resistance (VGS = 10 V, ID = 17 A)	RDS(on)	-	0.45	-	惟	On-state resistance when the device is fully on.
Turn-On Delay Time	td(on)	-	48	-	ns	Time delay from the moment the gate voltage reaches 10% of its final value to the moment the drain current reaches 10% of its final value.
Rise Time	tr	-	58	-	ns	Time for the drain current to rise from 10% to 90% of its final value.
Turn-Off Delay Time	td(off)	-	11	-	ns	Time delay from the moment the gate voltage drops to 90% of its initial value to the moment the drain current drops to 90% of its initial value.
Fall Time	tf	-	39	-	ns	Time for the drain current to fall from 90% to 10% of its initial value.

Instructions:

1. Operating Conditions:

   • Ensure that the maximum ratings are not exceeded during operation.
   • The device should be operated within the specified temperature ranges to avoid damage.

2. Thermal Management:

   • Use appropriate heat sinks to manage the junction temperature, especially when operating at high power levels.
   • Ensure good thermal conductivity between the device and the heat sink.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) within the specified range to avoid damaging the gate oxide.
   • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Pulse Operation:

   • For pulse applications, ensure that the pulse width and frequency are within the safe operating area (SOA) of the device.

5. Storage:

   • Store the device in a dry environment within the specified storage temperature range to prevent moisture damage.

6. Handling:

   • Handle the device with care to avoid mechanical stress and electrostatic discharge (ESD) damage.
   • Use proper ESD protection measures when handling the device.

(For reference only)