Details

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BUY MMD60R580Q https://www.utsource.net/itm/p/12606345.html

Parameter	Symbol	Value	Unit	Notes
Maximum Drain-Source Voltage	VDS(max)	600	V	-
Maximum Gate-Source Voltage	VGS(max)	卤20	V	-
Maximum Continuous Drain Current	ID(max)	580	A	at TC = 25掳C
Maximum Pulse Drain Current	IDM(max)	1160	A	tp = 10 渭s, IAS = 0.33 IDM
Maximum Power Dissipation	PTOT(max)	2400	W	at TC = 25掳C
Junction to Case Thermal Resistance	R胃JC	0.012	掳C/W	-
Junction to Ambient Thermal Resistance	R胃JA	0.25	掳C/W	-
Storage Temperature Range	Tstg	-55 to +150	掳C	-
Operating Junction Temperature Range	TJ(op)	-55 to +175	掳C	-

Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage (V_DS) does not exceed 600V.
   • The gate-source voltage (V_GS) should be kept within 卤20V to avoid damage.

2. Current Management:

   • The continuous drain current (I_D) should not exceed 580A at a case temperature (T_C) of 25掳C.
   • For pulse operations, the maximum pulse drain current (I_DM) is 1160A with a pulse duration (t_p) of 10 渭s and a current sharing factor (I_AS) of 0.33 I_DM.

3. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 2400W at a case temperature (T_C) of 25掳C.

4. Thermal Management:

   • Ensure proper heat sinking to manage the junction-to-case thermal resistance (R_胃JC) of 0.012掳C/W and the junction-to-ambient thermal resistance (R_胃JA) of 0.25掳C/W.

5. Temperature Ranges:

   • Store the device within the storage temperature range of -55掳C to +150掳C.
   • Operate the device within the operating junction temperature range of -55掳C to +175掳C.

6. Handling and Installation:

   • Handle the device with care to avoid mechanical stress and electrostatic discharge (ESD).
   • Follow recommended soldering profiles and ensure proper mounting to prevent thermal and mechanical issues.

7. Testing and Verification:

   • Verify all parameters and conditions during testing to ensure the device operates within specified limits.
   • Regularly inspect the device for signs of wear or damage, especially in high-stress applications.

(For reference only)