Details

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BUY 28NM50N https://www.utsource.net/itm/p/12606347.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	50	-	V
Gate-Source Voltage	VGS	-10	-	10	V
Continuous Drain Current	ID	-	50	-	A	@ TC = 25掳C
Pulse Drain Current	ID(p)	-	100	-	A	tp = 10 渭s, Duty Cycle = 1%
Power Dissipation	PTOT	-	100	-	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The 28NM50N is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
   • Avoid exposing the device to temperatures outside the specified storage temperature range.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation, especially when operating at high current levels.
   • Use recommended PCB layout guidelines to minimize parasitic inductance and ensure stable operation.

3. Biasing:

   • Apply gate-source voltage (V_GS) within the specified limits to avoid damage to the gate oxide.
   • For optimal performance, keep V_GS between 4V and 10V for full enhancement.

4. Operation:

   • Do not exceed the maximum drain-source voltage (V_DS) to prevent breakdown.
   • Monitor the junction temperature (T_J) to ensure it stays below 175掳C to avoid thermal runaway.

5. Testing:

   • When testing, use pulsed conditions to avoid exceeding the maximum power dissipation.
   • For continuous operation, ensure that the device is adequately cooled to maintain T_J within safe limits.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture absorption and degradation.
   • Follow recommended packaging and handling procedures to maintain device integrity.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)