Details

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BUY MMF80R450PTH https://www.utsource.net/itm/p/12606382.html

Parameter	Value	Unit
Type	Metal Oxide Field-Effect Transistor (MOSFET)	-
Package	TO-220	-
Maximum Drain-Source Voltage (VDS)	450	V
Maximum Gate-Source Voltage (VGS)	卤20	V
Continuous Drain Current (ID)	8.0	A
Pulse Drain Current (IDM)	24.0	A
Power Dissipation (PD)	150	W
Junction Temperature (TJ)	-55 to +175	掳C
Storage Temperature (TSTG)	-65 to +150	掳C
Total Gate Charge (Qg)	73	nC
Input Capacitance (Ciss)	1650	pF
Output Capacitance (Coss)	290	pF
Reverse Transfer Capacitance (Crss)	280	pF
RDS(on) at VGS = 10V	0.55	惟

Instructions for Use:

1. Handling:

   • Handle the MMF80R450PTH with care to avoid damage to the leads and body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow recommended PCB layout guidelines to minimize parasitic inductances and capacitances.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified range of 卤20V.
   • Ensure that the drain-source voltage (VDS) does not exceed 450V.

4. Current Handling:

   • Do not exceed the continuous drain current (ID) of 8.0A or the pulse drain current (IDM) of 24.0A.
   • Consider derating for higher ambient temperatures.

5. Thermal Management:

   • Monitor junction temperature (TJ) to ensure it stays within the -55掳C to +175掳C range.
   • Use thermal paste and heatsinks as necessary to maintain optimal operating temperatures.

6. Storage:

   • Store the device in a dry, cool place within the temperature range of -65掳C to +150掳C.
   • Avoid exposure to corrosive environments.

7. Testing:

   • Use a suitable test setup to verify the device parameters before integrating it into your circuit.
   • Ensure all connections are secure and correct to prevent damage during testing.

(For reference only)