FP30R06W1E3/30A600V

FP30R06W1E3/30A600V


Specifications
Details

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Parameter Symbol Value Unit Conditions / Notes
Maximum Drain Current ID 30 A @ Tc = 25°C, Pulse Width ≤ 300 μs
Maximum Drain-Source Voltage VDS 600 V
Maximum Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 30 A @ Tc = 25°C
Power Dissipation PD 180 W @ Tc = 25°C, θjc = 1.5 K/W
Junction Temperature TJ -55 to +175 °C Operating Range
Storage Temperature TSTG -55 to +150 °C Storage and Handling

Instructions for Use:

  1. Handling Precautions:

    • The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
  2. Mounting:

    • Ensure the thermal resistance between the junction and the case (θjc) does not exceed 1.5 K/W to maintain effective heat dissipation.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to prevent damage to the device.
    • For continuous operation, ensure that the drain current does not exceed 30A at a case temperature of 25°C.
  4. Pulse Operation:

    • For pulse applications, ensure the pulse width does not exceed 300 μs to avoid exceeding safe operating conditions.
  5. Temperature Considerations:

    • Operate within the specified junction temperature range (-55°C to +175°C) for reliable performance.
    • Store the device within the storage temperature range (-55°C to +150°C).
  6. Voltage Application:

    • Apply gate-source voltage within the ±20V limit to prevent gate damage.
    • Ensure the drain-source voltage does not exceed 600V to avoid breakdown.
  7. Power Dissipation:

    • Design the system to handle up to 180W power dissipation under the specified conditions to avoid overheating.
(For reference only)

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