Details

---

BUY SGT40N60NPFD https://www.utsource.net/itm/p/12606417.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-60	-	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	8.5	17	A	@ TC = 25掳C, VGS = 10V
Pulse Drain Current	ID(p)	-	29	-	A	@ TC = 25掳C, VGS = 10V, tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	130	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.65	-	掳C/W
Total Gate Charge	QG	-	45	-	nC	@ VGS = 10V, ID = 8.5A
Input Capacitance	Ciss	-	1700	-	pF	@ VDS = 400V, f = 1 MHz
Output Capacitance	Coss	-	280	-	pF	@ VDS = 400V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	300	-	pF	@ VDS = 400V, f = 1 MHz
Turn-On Delay Time	td(on)	-	100	-	ns	@ VDS = 400V, ID = 8.5A, VGS = 10V, RG = 10惟
Rise Time	tr	-	45	-	ns	@ VDS = 400V, ID = 8.5A, VGS = 10V, RG = 10惟
Turn-Off Delay Time	td(off)	-	70	-	ns	@ VDS = 400V, ID = 8.5A, VGS = 10V, RG = 10惟
Fall Time	tf	-	50	-	ns	@ VDS = 400V, ID = 8.5A, VGS = 10V, RG = 10惟

Instructions for Use:

1. Handling Precautions:

   • The SGT40N60NPFD is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
   • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.

2. Mounting and Soldering:

   • Ensure proper heat sinking to manage the power dissipation and keep the junction temperature within safe limits.
   • Follow recommended soldering profiles to avoid thermal shock and ensure good electrical and mechanical connections.

3. Circuit Design:

   • Use appropriate gate resistors to control switching times and reduce electromagnetic interference (EMI).
   • Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.

4. Thermal Management:

   • Monitor the junction temperature during operation to ensure it does not exceed the maximum rating.
   • Use thermal vias and heatsinks to improve heat dissipation from the device.

5. Storage and Transportation:

   • Store the device in a dry, cool environment to prevent moisture absorption and degradation.
   • Use static-safe packaging when transporting the device to prevent ESD damage.

6. Testing and Troubleshooting:

   • Use a high-impedance multimeter to check for continuity and resistance values.
   • If the device fails, check for overvoltage, overcurrent, or thermal issues in the circuit.

By following these guidelines, you can ensure reliable and efficient operation of the SGT40N60NPFD MOSFET.

(For reference only)