Details

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BUY MJE15034G/MJE15035G https://www.utsource.net/itm/p/12606421.html

Parameter	MJE15034G	MJE15035G
Type	NPN Silicon Transistor	PNP Silicon Transistor
Collector-Emitter Voltage (VCEO)	80 V	80 V
Emitter-Base Voltage (VEBO)	6 V	6 V
Collector Current (IC)	15 A	15 A
Power Dissipation (PTOT)	200 W	200 W
DC Current Gain (hFE)	20 - 200	20 - 200
Transition Frequency (fT)	1.5 MHz	1.5 MHz
Storage Temperature Range (TSTG)	-55掳C to +150掳C	-55掳C to +150掳C
Operating Temperature Range (TA)	-55掳C to +150掳C	-55掳C to +150掳C
Package Type	TO-247	TO-247

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Use proper anti-static precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure good thermal contact between the transistor and the heat sink.
   • Use a suitable thermal compound to enhance heat transfer.
   • Tighten the mounting screw to the recommended torque to avoid mechanical stress.

3. Biasing:

   • For MJE15034G (NPN), ensure the base is biased positively relative to the emitter.
   • For MJE15035G (PNP), ensure the base is biased negatively relative to the emitter.
   • Use appropriate biasing resistors to control the base current and prevent excessive collector current.

4. Operation:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Monitor the temperature of the transistor during operation to ensure it stays within the operating range.
   • Use a heatsink if the power dissipation exceeds the self-heating limit of the package.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to protect from static and physical damage.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Test the transistor under controlled conditions to ensure it meets the required specifications.

(For reference only)