Details
BUY IRFZ44R https://www.utsource.net/itm/p/12606439.html
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 55 | V | |
| Gate-Source Voltage | VGS | -20 | - | 12 | V | |
| Continuous Drain Current | ID | - | - | 49 | A | Ta = 25掳C |
| Continuous Drain Current | ID | - | - | 32 | A | Tc = 25掳C |
| Pulse Drain Current | ID(p) | - | - | 180 | A | tp = 10 渭s, IG = 11 A |
| Total Power Dissipation | PT | - | - | 157 | W | Tc = 25掳C |
| Junction Temperature | TJ | - | - | 175 | 掳C | |
| Storage Temperature Range | Tstg | -55 | - | 150 | 掳C | |
| Thermal Resistance, Junction to Case | R胃JC | - | 0.46 | - | 掳C/W | |
| Input Capacitance | Ciss | - | 1700 | - | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | - | 410 | - | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 45 | - | pF | VDS = 25 V, f = 1 MHz |
| Gate Charge | QG | - | 50 | - | nC | VGS = 10 V |
| Turn-On Delay Time | td(on) | - | 10 | - | ns | VGS = 10 V, ID = 30 A |
| Rise Time | tr | - | 28 | - | ns | VGS = 10 V, ID = 30 A |
| Turn-Off Delay Time | td(off) | - | 19 | - | ns | VGS = -5 V, ID = 30 A |
| Fall Time | tf | - | 35 | - | ns | VGS = -5 V, ID = 30 A |
Instructions for Use:
Handling Precautions:
- The IRFZ44R is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.
- Avoid exceeding the maximum ratings to prevent damage.
Mounting:
- Ensure good thermal contact between the device and the heat sink to maintain optimal operating temperatures.
- Use a suitable thermal compound to enhance heat dissipation.
Biasing:
- Apply the gate voltage (VGS) within the specified range to avoid gate oxide breakdown.
- For best performance, use a gate resistor to control the rise and fall times of the gate signal.
Operating Conditions:
- Keep the junction temperature (TJ) below the maximum rating to ensure reliable operation.
- Monitor the power dissipation (PT) to avoid overheating.
Testing:
- When testing the device, use a current-limited power supply to prevent accidental overcurrent conditions.
- Measure the drain-source voltage (VDS) and current (ID) to verify correct operation.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Follow recommended storage temperature ranges to avoid degradation.
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