Details

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BUY FQP65N06 https://www.utsource.net/itm/p/12606440.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	60	V	-
Gate-Source Voltage	VGS	-10	-	20	V	-
Continuous Drain Current	ID	-	-	65	A	TC = 25掳C
Continuous Drain Current	ID	-	-	47	A	TC = 100掳C
Pulse Drain Current	ID(p)	-	-	130	A	tp = 10 ms, TC = 25掳C
Power Dissipation	PTOT	-	-	180	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Total Gate Charge	QG	-	99	-	nC	VGS = 10V, ID = 20A
Input Capacitance	Ciss	-	1800	-	pF	VDS = 10V, f = 1 MHz
Output Capacitance	Coss	-	260	-	pF	VDS = 10V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	38	-	pF	VDS = 10V, f = 1 MHz
RDS(on) at 4.5V	RDS(on)	-	0.018	-	惟	VGS = 4.5V, ID = 20A
RDS(on) at 10V	RDS(on)	-	0.013	-	惟	VGS = 10V, ID = 20A

Instructions for Use:

1. Power Handling:

   • Ensure that the power dissipation (P_TOT) does not exceed 180W at T_C = 25掳C.
   • For continuous operation, keep the drain current (I_D) within the specified limits to avoid overheating.

2. Thermal Management:

   • The maximum junction temperature (T_J) should not exceed 150掳C.
   • Use appropriate heat sinks or cooling solutions to manage the temperature, especially during high-power applications.

3. Voltage Ratings:

   • Do not exceed the maximum drain-source voltage (V_DS) of 60V.
   • The gate-source voltage (V_GS) should be kept between -10V and 20V to prevent damage to the device.

4. Current Ratings:

   • The continuous drain current (I_D) should not exceed 65A at T_C = 25掳C and 47A at T_C = 100掳C.
   • For pulse applications, the peak drain current (I_D(p)) can go up to 130A for short durations (t_p = 10 ms).

5. Capacitance and Charge:

   • Consider the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) when designing circuits to minimize switching losses.
   • The total gate charge (Q_G) is important for determining the drive requirements of the MOSFET.

6. On-Resistance:

   • The on-resistance (R_DS(on)) is a critical parameter for minimizing power loss. It varies with the gate-source voltage (V_GS).

7. Storage:

   • Store the device in a dry environment within the temperature range of -55掳C to 150掳C to ensure long-term reliability.

8. Handling:

   • Handle the device with care to avoid static discharge, which can damage the sensitive components.
   • Follow proper ESD (Electrostatic Discharge) precautions when handling and installing the device.

(For reference only)