Details

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BUY TMS2564JL https://www.utsource.net/itm/p/12606449.html

Parameter	Description	Value
Part Number	Full part number	TMS2564JL
Type	Type of device	SRAM (Static Random Access Memory)
Memory Size	Total memory size	256 K x 8 bits
Data Width	Data bus width	8 bits
Supply Voltage (Vcc)	Operating voltage range	4.5V to 5.5V
Operating Temperature	Temperature range for operation	-40掳C to +85掳C
Access Time	Time required to access data	70 ns
Package Type	Type of package	DIP (Dual Inline Package)
Pin Count	Number of pins	28
Standby Current	Current consumption in standby mode	5 渭A
Active Current	Current consumption during active operation	30 mA
Write Cycle Time	Time required to complete a write cycle	150 ns
Read Cycle Time	Time required to complete a read cycle	150 ns
Output Drive Capability	Maximum output drive capability	24 mA
Input Clamping Voltage	Maximum input clamping voltage	6.0V
Storage Temperature	Temperature range for storage	-65掳C to +150掳C

Instructions for Use

1. Power Supply:

   • Connect the Vcc pin to a stable power supply within the specified range (4.5V to 5.5V).
   • Connect the Vss pin to ground.

2. Address Lines:

   • Connect the address lines (A0 to A17) to the appropriate address decoder or microcontroller.
   • Ensure that the address lines are properly driven to select the desired memory location.

3. Data Lines:

   • Connect the data lines (D0 to D7) to the data bus of the microcontroller or other data source.
   • Ensure that the data lines are properly driven during read and write operations.

4. Control Signals:

   • Chip Select (CS#): Active low signal to enable the chip.
   • Output Enable (OE#): Active low signal to enable data output.
   • Write Enable (WE#): Active low signal to initiate a write operation.
   • Ensure that these control signals are properly managed to avoid conflicts and ensure correct operation.

5. Timing Considerations:

   • Ensure that the access time (70 ns) is respected to avoid data corruption.
   • The write and read cycle times (150 ns) should be considered when designing the timing of your system.

6. Handling:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry environment within the specified storage temperature range.

7. Testing:

   • Before integrating the device into a system, perform basic tests to verify functionality.
   • Use a known good test pattern to read and write data to various memory locations.

8. Documentation:

   • Refer to the datasheet and application notes for more detailed information and specific use cases.

(For reference only)