Details

---

BUY 2SA1106 https://www.utsource.net/itm/p/12606459.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	150	mA
Base Current	IB	15	mA
Power Dissipation	PT	625	mW
Storage Temperature	TSTG	-55 to 150	掳C
Operating Temperature	TA	-55 to 150	掳C

Instructions for Use:

1. Mounting: Ensure proper mounting to avoid mechanical stress on the leads.
2. Heat Dissipation: For high power applications, use a heatsink to manage heat dissipation.
3. Biasing: Proper biasing is essential to prevent the transistor from operating in saturation or cutoff regions.
4. Protection: Use appropriate protection circuits (e.g., diodes) to protect against voltage spikes and reverse polarity.
5. Storage: Store in a dry, cool place to avoid moisture damage.
6. Handling: Handle with care to avoid static discharge which can damage the transistor. Use anti-static wrist straps if necessary.
7. Soldering: Solder quickly to avoid overheating the device. Use a soldering iron with a temperature not exceeding 300掳C.

(For reference only)