Details

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BUY 200N15N https://www.utsource.net/itm/p/12606482.html

Below is the parameter table and instructions for the 200N15N MOSFET.

Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Drain-Source Voltage	VDS	-	-	650	V	-
Gate-Source Voltage	VGS	-15	-	15	V	-
Continuous Drain Current	ID	-	-	15	A	TC = 25掳C
Continuous Drain Current	ID	-	-	8.5	A	TC = 100掳C
Pulse Drain Current (10ms)	ID(p)	-	-	40	A	TC = 25掳C
Power Dissipation	PD	-	-	180	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-
Gate Charge	QG	-	39	55	nC	VGS = 15V, ID = 8A
Input Capacitance	Ciss	-	2400	3500	pF	VDS = 400V, f = 1MHz
Output Capacitance	Coss	-	250	450	pF	VDS = 400V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	320	550	pF	VDS = 400V, f = 1MHz
On-State Resistance	RDS(on)	-	0.18	0.24	惟	VGS = 10V, ID = 8A
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 1mA

Instructions

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid damage to the leads and body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure proper thermal management by using a heat sink if necessary.
   • Follow the recommended PCB layout guidelines to ensure optimal performance and reliability.
   • Solder the device at temperatures not exceeding 260掳C for a duration of 10 seconds.

3. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified range to avoid damage.
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating.
   • Keep the junction temperature (T_J) below 175掳C to prevent thermal runaway.

4. Testing:

   • Use a suitable test setup to measure the parameters such as on-state resistance (R_DS(on)) and gate charge (Q_G).
   • Refer to the datasheet for specific test conditions and procedures.

5. Safety:

   • Do not exceed the absolute maximum ratings under any operating conditions.
   • Ensure that the device is properly isolated from high-voltage sources to prevent electrical shock.

By following these instructions, you can ensure the reliable and safe operation of the 200N15N MOSFET.

(For reference only)