Details

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BUY TGPF30N40P https://www.utsource.net/itm/p/12606529.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	0.24	-	惟	VGS = 10V, ID = 10A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250渭A
Continuous Drain Current	ID	-	-	30	A	TC = 25掳C
Pulse Drain Current	IGM	-	-	90	A	tp = 10ms, TC = 25掳C
Power Dissipation	PD	-	-	170	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for TGPF30N40P:

1. Installation:

   • Ensure the device is handled with care to avoid damage from electrostatic discharge (ESD).
   • Use appropriate heat sinks or cooling solutions if operating near maximum power dissipation.

2. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Maintain the junction temperature within specified limits to ensure reliable operation.

3. Gate Drive:

   • Apply a gate-source voltage (VGS) of at least 10V to fully turn on the device and minimize on-state resistance.
   • Avoid applying voltages outside the threshold range to prevent unintended operation.

4. Handling Pulses:

   • For pulse operations, ensure the pulse duration does not exceed the specified limits to prevent thermal overload.

5. Storage:

   • Store the device in a dry, cool environment within the storage temperature range to prevent degradation.

6. Safety Precautions:

   • Always follow safe handling practices and consult the datasheet for detailed specifications and safety guidelines.

(For reference only)