Details

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BUY IGCM20F60GA/20A/600V https://www.utsource.net/itm/p/12606544.html

Parameter	Symbol	Min	Typical	Max	Unit	Test Conditions
Breakdown Voltage	VBR(DSS)	-	600	-	V	ID = 1 mA, Tj = 25°C
Continuous Drain Current	ID(M)	-	20	-	A	VDS = 600 V, TC = 25°C
Continuous Drain Current (Pulsed)	ID(P)	-	40	-	A	VDS = 600 V, TC = 25°C, tp = 10 μs, frep ≤ 100 Hz
Gate-Source Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250 μA, Tj = 25°C
On-State Resistance	RDS(on)	-	3.0	-	Ω	VGS = 10 V, ID = 20 A, Tj = 25°C
Input Capacitance	Ciss	-	1800	-	pF	VDS = 600 V, f = 1 MHz, Tj = 25°C
Output Capacitance	Coss	-	450	-	pF	VDS = 600 V, f = 1 MHz, Tj = 25°C
Reverse Transfer Capacitance	Crss	-	130	-	pF	VDS = 600 V, f = 1 MHz, Tj = 25°C
Total Gate Charge	QG	-	95	-	nC	VDS = 600 V, ID = 20 A, VGS = 10 V, Tj = 25°C
Gate-Source Charge	QGS	-	60	-	nC	VDS = 600 V, ID = 20 A, VGS = 10 V, Tj = 25°C
Gate-Drain Charge	QGD	-	35	-	nC	VDS = 600 V, ID = 20 A, VGS = 10 V, Tj = 25°C
Turn-On Delay Time	td(on)	-	25	-	ns	VDS = 400 V, ID = 20 A, VGS = 10 V, Rg = 10 Ω, Tj = 25°C
Rise Time	tr	-	45	-	ns	VDS = 400 V, ID = 20 A, VGS = 10 V, Rg = 10 Ω, Tj = 25°C
Turn-Off Delay Time	td(off)	-	30	-	ns	VDS = 400 V, ID = 20 A, VGS = 10 V, Rg = 10 Ω, Tj = 25°C
Fall Time	tf	-	40	-	ns	VDS = 400 V, ID = 20 A, VGS = 10 V, Rg = 10 Ω, Tj = 25°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage from electrostatic discharge (ESD).
   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink.

2. Biasing:

   • Apply a gate-source voltage (V_GS) of at least 10 V to fully turn on the MOSFET.
   • Keep V_GS within the specified limits to prevent gate oxide damage.

3. Thermal Management:

   • Ensure adequate cooling to keep the junction temperature (T_j) below the maximum rating.
   • Use a heat sink with sufficient thermal resistance to dissipate the power loss effectively.

4. Switching:

   • Use a low gate resistance (R_g) to minimize switching times and reduce switching losses.
   • Ensure that the gate drive circuit can provide the necessary current to charge and discharge the gate capacitance quickly.

5. Storage and Operating Conditions:

   • Store the device in a dry environment to prevent moisture damage.
   • Operate the device within the specified temperature and voltage ranges to ensure reliable performance.

6. Testing:

   • Follow the test conditions provided in the table for accurate parameter measurements.
   • Use appropriate test equipment and methods to avoid introducing errors or damage during testing.

7. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current circuits.
   • Use protective equipment and ensure proper grounding to prevent electrical hazards.

(For reference only)