Details

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BUY P22N60E https://www.utsource.net/itm/p/12606578.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	600	-	V
Gate-Source Voltage	VGSS	-15	-	15	V
Continuous Drain Current	ID	-	22	-	A	TC = 25掳C
Pulse Drain Current	IDM	-	44	-	A	tp = 10 渭s, IGT = 4 A
Total Power Dissipation	PTOT	-	370	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Gate Charge	QG	-	100	-	nC
Input Capacitance	Ciss	-	1800	-	pF	VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	-	450	-	pF	VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	280	-	pF	VDS = 400 V, f = 1 MHz
On-State Resistance	RDS(on)	-	0.24	-	惟	VGS = 10 V, ID = 22 A
Threshold Gate Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250 渭A
Turn-On Delay Time	td(on)	-	45	-	ns	VGS = 10 V, IG = 4 A, VDS = 400 V, IL = 10 A
Rise Time	tr	-	50	-	ns	VGS = 10 V, IG = 4 A, VDS = 400 V, IL = 10 A
Turn-Off Delay Time	td(off)	-	35	-	ns	VGS = -10 V, IG = -4 A, VDS = 400 V, IL = 10 A
Fall Time	tf	-	45	-	ns	VGS = -10 V, IG = -4 A, VDS = 400 V, IL = 10 A

Instructions for Using P22N60E:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the high power dissipation.
   • Handle with care to avoid damage to the gate terminal, which is sensitive to electrostatic discharge (ESD).

2. Biasing:

   • Apply a gate-source voltage (V_GS) of at least 10 V to ensure full turn-on and minimize on-state resistance.
   • Use a gate resistor to limit the gate current and prevent oscillations.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 150掳C.
   • Use thermal grease between the MOSFET and heat sink for better thermal conductivity.

4. Pulse Operation:

   • For pulse applications, ensure that the pulse width and frequency do not exceed the safe operating area (SOA) of the device.
   • The pulse drain current (I_DM) can be higher than the continuous drain current (I_D), but the total energy dissipated must be within limits.

5. Storage and Operating Conditions:

   • Store the device in a dry environment within the specified storage temperature range (-55掳C to 150掳C).
   • Operate the device within the specified operating conditions to ensure reliable performance.

6. Capacitance Considerations:

   • Account for the input (C_iss), output (C_oss), and reverse transfer (C_rss) capacitances in your circuit design, especially in high-frequency applications.

7. Switching Characteristics:

   • Optimize the switching times (t_d(on), t_r, t_d(off), t_f) to reduce switching losses and improve efficiency.
   • Use appropriate gate drive circuits to achieve fast and clean transitions.

(For reference only)