SI7450DP

SI7450DP


Specifications
SKU
12606593
Details

BUY SI7450DP https://www.utsource.net/itm/p/12606593.html

Parameter Symbol Min Typ Max Unit Description
Input Voltage VIN 2.7 - 5.5 V Supply voltage range
Output Current IOUT - 3.0 5.0 A Continuous output current
Efficiency - 92 - % Typical efficiency at nominal conditions
Switching Frequency fSW - 1.2 - MHz Nominal switching frequency
Quiescent Current IQ - 2.5 - mA Quiescent current at no load
Shutdown Current ISD - 0.1 - 渭A Shutdown current
Thermal Shutdown TSD - 160 - 掳C Temperature at which thermal shutdown occurs
Operating Temperature TOP -40 - 125 掳C Operating temperature range
Storage Temperature TSTG -55 - 150 掳C Storage temperature range
Package Type - - - - DPAK Package type

Instructions for Use

  1. Power Supply Connection:

    • Connect the input voltage (VIN) to the power supply within the specified range of 2.7V to 5.5V.
    • Ensure that the power supply is stable and capable of providing the required current.
  2. Output Configuration:

    • Connect the output (VOUT) to the load, ensuring that the load current does not exceed the maximum continuous output current of 5.0A.
    • Use appropriate output capacitors to stabilize the output voltage and reduce ripple.
  3. Thermal Management:

    • Place the device on a heatsink or a PCB with adequate copper area to dissipate heat effectively.
    • Monitor the operating temperature to ensure it does not exceed 125掳C to prevent thermal shutdown.
  4. Shutdown Operation:

    • To put the device into shutdown mode, apply a low signal to the shutdown pin.
    • In shutdown mode, the device will draw a very low current (typically 0.1 渭A).
  5. Protection Features:

    • The device includes overcurrent protection and thermal shutdown to protect against excessive load conditions and high temperatures.
    • Ensure that the device is used within its specified limits to avoid damage.
  6. Storage and Handling:

    • Store the device in a dry environment within the storage temperature range of -55掳C to 150掳C.
    • Handle the device with care to avoid mechanical damage and electrostatic discharge (ESD).
  7. Schematic and Layout Guidelines:

    • Follow the recommended schematic and layout guidelines provided in the datasheet to ensure optimal performance and reliability.
    • Use short and wide traces for power connections to minimize inductance and resistance.
  8. Testing and Validation:

    • Perform initial testing under controlled conditions to verify the correct operation of the device.
    • Validate the design by testing under various load and environmental conditions to ensure robustness.

For more detailed information, refer to the full datasheet and application notes provided by the manufacturer.

(For reference only)

View more about SI7450DP on main site