Details

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Parameter	Symbol	Min	Typ	Max	Unit	Condition
Collector-Emitter Voltage	VCE	-	650	-	V
Gate-Source Voltage	VGS	-20	-	15	V
Continuous Collector Current	IC	-	50	-	A	TC = 25掳C
Continuous Collector Current (TC = 100掳C)	IC(TC)	-	37.5	-	A	TC = 100掳C
Pulse Collector Current	ICmax	-	150	-	A	tp = 10 渭s, IG = 10 A
Total Power Dissipation	PT	-	400	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the collector-emitter voltage (V_CE) does not exceed 650V.
   • The gate-source voltage (V_GS) should be kept between -20V and +15V to avoid damage.

2. Current Ratings:

   • The continuous collector current (I_C) is rated at 50A at a case temperature (T_C) of 25掳C. This reduces to 37.5A at T_C = 100掳C.
   • For pulse conditions, the maximum collector current (I_Cmax) can reach 150A for a pulse duration of 10 渭s with a gate current (I_G) of 10A.

3. Power Dissipation:

   • The total power dissipation (P_T) should not exceed 400W at a case temperature of 25掳C.

4. Temperature Considerations:

   • The junction temperature (T_J) should not exceed 150掳C.
   • Store the device within the temperature range of -55掳C to 150掳C.

5. Handling and Mounting:

   • Handle the device with care to avoid mechanical stress.
   • Ensure proper heat sinking to manage thermal dissipation effectively.

6. Gate Drive:

   • Use appropriate gate drive circuits to ensure reliable operation. Avoid excessive gate current which can lead to damage.

7. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into a circuit.

8. Compliance:

   • Ensure compliance with all relevant safety and regulatory standards when using this device in your application.

(For reference only)