Details

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BUY 2SC3688 https://www.utsource.net/itm/p/12606598.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	400	V
Collector-Base Voltage	VCBO	-	-	450	V
Emitter-Base Voltage	VEBO	-	-	10	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PT	-	-	125	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Transition Frequency	fT	-	30	-	MHz
DC Current Gain (hFE)	-	10	50	200	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use proper heat sinks to manage power dissipation and maintain junction temperature within safe limits.

2. Mounting:

   • Ensure good thermal contact with the heat sink.
   • Use a thermal compound to enhance heat transfer.

3. Biasing:

   • Set the base current (I_B) appropriately to achieve the desired collector current (I_C).
   • Refer to the DC current gain (h_FE) for biasing calculations.

4. Storage:

   • Store in a dry place within the specified storage temperature range to avoid degradation.

5. Testing:

   • Use appropriate test equipment to verify the transistor parameters before installation.
   • Perform tests at room temperature unless otherwise specified.

6. Applications:

   • Suitable for high-power audio amplifiers, switching circuits, and other applications requiring high current and voltage handling.

7. Soldering:

   • Use a controlled soldering process to avoid overheating the device.
   • Follow the recommended soldering profile provided by the manufacturer.

8. Environmental Considerations:

   • Dispose of the device according to local environmental regulations.

(For reference only)