Details

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BUY FGH60N60SMD https://www.utsource.net/itm/p/12606632.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	600	-	V	Continuous
Gate-Source Voltage	VGS	-20	-	20	V	Continuous
Drain Current	ID	-	60	-	A	@ TC = 25掳C
Continuous Drain Current	ID(DC)	-	38	-	A	@ TC = 100掳C
Pulse Drain Current	ID(m)	-	120	-	A	@ TC = 25掳C, tp = 10 渭s, IG = 10 A
Power Dissipation	PTOT	-	-	140	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C	Maximum
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance (Junction to Case)	Rth(j-c)	-	-	0.4	掳C/W
Input Capacitance	Ciss	-	2900	-	pF	@ VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	-	220	-	pF	@ VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	360	-	pF	@ VDS = 400 V, f = 1 MHz
Turn-On Delay Time	td(on)	-	42	-	ns	@ ID = 20 A, VGS = 15 V, RG = 2 惟
Rise Time	tr	-	40	-	ns	@ ID = 20 A, VGS = 15 V, RG = 2 惟
Turn-Off Delay Time	td(off)	-	35	-	ns	@ ID = 20 A, VGS = -15 V, RG = 2 惟
Fall Time	tf	-	45	-	ns	@ ID = 20 A, VGS = -15 V, RG = 2 惟

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance.
   • Handle with care to avoid static damage.

2. Operating Conditions:

   • Do not exceed the maximum ratings under any operating conditions.
   • Ensure the junction temperature does not exceed 175掳C.

3. Gate Drive:

   • Use appropriate gate resistors to control switching times and minimize overshoot and ringing.
   • Ensure the gate-source voltage is within the specified range to prevent damage.

4. Thermal Management:

   • Use a heatsink or cooling solution to maintain the device within its thermal limits.
   • Monitor the case temperature to ensure it does not exceed the maximum allowable value.

5. Storage:

   • Store in a dry, cool environment to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions during storage and handling.

6. Testing:

   • Use recommended test conditions to accurately measure parameters.
   • Ensure all test equipment is properly calibrated.

7. Application Notes:

   • Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.

(For reference only)