Details

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BUY 2SB891 https://www.utsource.net/itm/p/12606642.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	-	400	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	-	5	-	V
Collector-Base Breakdown Voltage (Emitter Open)	V(BR)CBO	-	450	-	V
Collector Current (Continuous)	IC	-	10	-	A
Collector Current (Pulse)	ICM	-	30	-	A
Base Current (Continuous)	IB	-	1	-	A
Base Current (Pulse)	IBM	-	3	-	A
Power Dissipation	PD	-	100	-	W
Operating Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the power dissipation.
   • Use insulated mounting hardware to avoid short circuits.

2. Biasing:

   • Ensure that the base current is within the specified limits to avoid damage.
   • Use appropriate resistors to limit the base current.

3. Operation:

   • Do not exceed the maximum collector-emitter voltage (V(BR)CEO) and collector-base voltage (V(BR)CBO).
   • Keep the operating junction temperature within the specified range to prevent thermal runaway.

4. Storage:

   • Store the device in a dry, cool place within the storage temperature range (TSTG).

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

6. Testing:

   • Use appropriate test equipment and methods to verify the parameters.
   • Ensure that the test conditions do not exceed the maximum ratings.

7. Safety:

   • Follow all safety guidelines and regulations when handling and using the device.
   • Ensure proper grounding and isolation to prevent electrical hazards.

(For reference only)