IRFB4110PBF IRFB4110

IRFB4110PBF IRFB4110


Specifications
SKU
12606664
Details

BUY IRFB4110PBF IRFB4110 https://www.utsource.net/itm/p/12606664.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - 55 - V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current (TC = 25掳C) ID - 33 - A
Continuous Drain Current (TC = 75掳C) ID - 28 - A
Pulse Drain Current (tp = 10 渭s, IG = 10 A) ID(p) - 120 - A
Total Power Dissipation (TC = 25掳C) PTOT - 190 - W
Total Power Dissipation (TC = 75掳C) PTOT - 130 - W
Junction Temperature TJ - - 150 掳C
Storage Temperature Range TSTG -65 - 150 掳C
Gate Charge QG - 140 - nC
Input Capacitance Ciss - 2400 - pF VGS = 10 V
Output Capacitance Coss - 110 - pF VDS = 25 V, VGS = 0 V
Reverse Transfer Capacitance Crss - 130 - pF VDS = 25 V, VGS = 0 V
Drain-Source On-State Resistance RDS(on) - 4.4 - m惟 VGS = 10 V, ID = 33 A, TC = 25掳C
Gate-Source Threshold Voltage VGS(th) 2.0 3.0 4.0 V ID = 250 渭A, TC = 25掳C

Instructions for Use:

  1. Handling Precautions:

    • The IRFB4110PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
    • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
  2. Mounting:

    • Ensure proper thermal management by using a heatsink if necessary to keep the junction temperature within safe limits.
    • Follow recommended PCB layout guidelines to minimize parasitic inductances and ensure stable operation.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to avoid damaging the gate oxide.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  4. Operation:

    • Ensure that the drain current (ID) does not exceed the continuous or pulse ratings depending on the application.
    • Monitor the power dissipation (PTOT) to prevent overheating, especially at higher ambient temperatures.
  5. Testing:

    • When testing the device, use a controlled environment to avoid exceeding the storage temperature range.
    • Measure the drain-source on-state resistance (RDS(on)) to verify the device is functioning correctly.
  6. Storage:

    • Store the device in a dry, cool place within the specified storage temperature range to maintain its performance and reliability.
(For reference only)

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