Details
BUY IRFB4110PBF IRFB4110 https://www.utsource.net/itm/p/12606664.html
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 55 | - | V | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | |
| Continuous Drain Current (TC = 25掳C) | ID | - | 33 | - | A | |
| Continuous Drain Current (TC = 75掳C) | ID | - | 28 | - | A | |
| Pulse Drain Current (tp = 10 渭s, IG = 10 A) | ID(p) | - | 120 | - | A | |
| Total Power Dissipation (TC = 25掳C) | PTOT | - | 190 | - | W | |
| Total Power Dissipation (TC = 75掳C) | PTOT | - | 130 | - | W | |
| Junction Temperature | TJ | - | - | 150 | 掳C | |
| Storage Temperature Range | TSTG | -65 | - | 150 | 掳C | |
| Gate Charge | QG | - | 140 | - | nC | |
| Input Capacitance | Ciss | - | 2400 | - | pF | VGS = 10 V |
| Output Capacitance | Coss | - | 110 | - | pF | VDS = 25 V, VGS = 0 V |
| Reverse Transfer Capacitance | Crss | - | 130 | - | pF | VDS = 25 V, VGS = 0 V |
| Drain-Source On-State Resistance | RDS(on) | - | 4.4 | - | m惟 | VGS = 10 V, ID = 33 A, TC = 25掳C |
| Gate-Source Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 渭A, TC = 25掳C |
Instructions for Use:
Handling Precautions:
- The IRFB4110PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
- Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary to keep the junction temperature within safe limits.
- Follow recommended PCB layout guidelines to minimize parasitic inductances and ensure stable operation.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damaging the gate oxide.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Operation:
- Ensure that the drain current (ID) does not exceed the continuous or pulse ratings depending on the application.
- Monitor the power dissipation (PTOT) to prevent overheating, especially at higher ambient temperatures.
Testing:
- When testing the device, use a controlled environment to avoid exceeding the storage temperature range.
- Measure the drain-source on-state resistance (RDS(on)) to verify the device is functioning correctly.
Storage:
- Store the device in a dry, cool place within the specified storage temperature range to maintain its performance and reliability.
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