Details

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BUY BS170 D26Z https://www.utsource.net/itm/p/12606668.html

Parameter	Value
Device Type	N-Channel Enhancement Mode MOSFET
VDS (Max)	50V
VGS (Max)	卤20V
ID (Max)	0.4A (Continuous)
PTOT (Max)	380mW (Ta = 25掳C)
RDS(on)	1.8惟 (Typical at VGS = 10V)
fT	7MHz
QG	10nC (Typical)
Package	TO-92
Operating Temperature	-65掳C to +150掳C

Instructions for Use:

1. Handling Precautions:

   • The BS170 D26Z is sensitive to electrostatic discharge (ESD). Handle with care and use ESD protection equipment.
   • Avoid exposing the device to temperatures outside its operating range.

2. Mounting:

   • Ensure proper heat sinking if the device is expected to dissipate significant power.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductance and capacitance.

3. Biasing:

   • Apply the gate-to-source voltage (V_GS) within the specified limits to avoid damaging the device.
   • For optimal performance, keep V_GS between 4V and 10V.

4. Operation:

   • The device can be used in a variety of applications, including switching circuits, amplifiers, and signal conditioning.
   • Ensure that the drain current (I_D) does not exceed the maximum rating to prevent overheating and potential failure.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and moisture.
   • Keep the device in its original packaging until ready for use to protect against static damage.

6. Testing:

   • When testing the device, use a low-voltage power supply and a current-limiting resistor to prevent accidental overcurrent conditions.
   • Measure the drain-to-source resistance (R_DS(on)) to verify the device is functioning correctly.

(For reference only)