Details

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BUY HGTD1N120BNS9ACT-ND https://www.utsource.net/itm/p/12606727.html

Parameter	Value	Unit
Part Number	HGTD1N120BNS9ACT-ND
Type	MOSFET
Configuration	N-Channel
Voltage - Drain to Source (Vds)	1200	V
Continuous Drain Current (Id)	45	A
Power Dissipation (Pd)	280	W
Gate Charge (Qg)	176	nC
Input Capacitance (Ciss)	4320	pF
Output Capacitance (Coss)	210	pF
Rds(on)	100	m惟
Junction Temperature (Tj)	-55 to +175	掳C
Package / Case	TO-247-3

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool environment.
   • Handle with care to avoid damage to the leads or body.

2. Installation:

   • Ensure correct orientation before installation.
   • Apply thermal paste if using a heatsink for optimal heat dissipation.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals according to your circuit diagram.
   • Ensure all connections are secure and insulated as necessary.

4. Thermal Management:

   • Monitor junction temperature to ensure it stays within specified limits.
   • Use appropriate cooling methods such as heatsinks or forced air cooling if necessary.

5. Safety Precautions:

   • Always disconnect power before making any changes to the circuit.
   • Follow proper grounding practices to prevent electrical shock.

6. Testing:

   • Test the device in a controlled environment before deploying in final applications.
   • Verify all parameters meet the specifications listed above.

(For reference only)