Details

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BUY SS413F https://www.utsource.net/itm/p/12606734.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Forward Voltage	VF	-	1.2	1.5	V	Voltage at IF = 20 mA
Reverse Current	IR	-	100	500	nA	At VR = 5 V, TA = 25°C
Peak Forward Current	IFM	-	-	100	mA	Pulse width ≤ 1 ms, duty cycle ≤ 2%
Operating Temperature	TOPR	-40	-	85	°C	Operating temperature range
Storage Temperature	TSTG	-65	-	150	°C	Storage temperature range
Reverse Breakdown Voltage	VBR	5	-	-	V	Minimum reverse breakdown voltage

Instructions for Use:

1. Forward Voltage (VF):

   • Ensure that the forward voltage applied to the diode does not exceed 1.5V when the forward current is 20mA.

2. Reverse Current (IR):

   • The reverse current should be kept below 500nA to avoid excessive leakage when the reverse voltage is 5V at room temperature (25°C).

3. Peak Forward Current (IFM):

   • The peak forward current should not exceed 100mA. This value is for pulses with a width of 1ms and a duty cycle of 2% or less.

4. Operating Temperature (TOPR):

   • The device is designed to operate within a temperature range of -40°C to 85°C. Ensure that the ambient temperature does not exceed these limits during operation.

5. Storage Temperature (TSTG):

   • Store the device in an environment where the temperature ranges from -65°C to 150°C to prevent damage.

6. Reverse Breakdown Voltage (VBR):

   • The minimum reverse breakdown voltage is 5V. Ensure that the reverse voltage applied to the diode does not exceed this value to avoid damage.

7. Handling:

   • Handle the device with care to avoid mechanical stress or damage to the leads.
   • Use appropriate ESD (Electrostatic Discharge) protection measures to prevent damage from static electricity.

8. Mounting:

   • Follow recommended soldering profiles to ensure reliable connections and avoid thermal shock.
   • Ensure proper cooling if the device is expected to dissipate significant power during operation.

(For reference only)