Details
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| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 600 | - | V | |
| Gate-Source Voltage | VGS | -15 | - | 15 | V | |
| Continuous Drain Current | ID | - | 3.6 | - | A | TC = 25掳C |
| Peak Pulse Drain Current | IDM | - | 9.0 | - | A | TC = 25掳C, tp = 10 渭s, Duty Cycle = 1% |
| Power Dissipation | PTOT | - | 1.2 | - | W | TC = 25掳C |
| Junction Temperature | TJ | - | - | 150 | 掳C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | 掳C |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 600V.
- The gate-source voltage (VGS) should be kept within -15V to +15V.
Current Ratings:
- The continuous drain current (ID) should not exceed 3.6A at a case temperature of 25掳C.
- For peak pulse conditions, the drain current (IDM) can reach up to 9.0A, but only for a pulse width of 10 渭s and a duty cycle of 1%.
Power Dissipation:
- The total power dissipation (PTOT) should not exceed 1.2W at a case temperature of 25掳C.
Temperature Considerations:
- The junction temperature (TJ) should not exceed 150掳C.
- Store the device in an environment with temperatures ranging from -55掳C to 150掳C.
Handling Precautions:
- Handle the device with care to avoid damage to the leads and body.
- Use proper static protection measures to prevent electrostatic discharge (ESD) damage.
Mounting:
- Ensure good thermal management by using appropriate heat sinks if necessary.
- Follow recommended soldering profiles to avoid thermal shock during assembly.
Testing:
- Perform initial testing under controlled conditions to ensure the device is functioning as expected.
- Regularly monitor the device parameters during operation to ensure they remain within specified limits.
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