Details

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BUY STW33N60M2 https://www.utsource.net/itm/p/12606782.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	600	V
Collector Current	IC	-	-	33	A	Tj = 25掳C
Power Dissipation	PTOT	-	-	150	W	TC = 25掳C
Junction Temperature	Tj	-20	-	175	掳C
Storage Temperature	Tstg	-40	-	150	掳C
Gate-Emitter Voltage	VGE	-15	-	20	V
Gate Charge	QG	-	85	-	nC	IC = 33A, Eoff = 1.8mJ
Turn-off Energy	Eoff	-	1.8	-	mJ	IC = 33A, VCE = 400V
Turn-on Energy	Eon	-	0.8	-	mJ	IC = 33A, VCE = 400V
Total Switching Losses	ETS	-	2.6	-	mJ	IC = 33A, VCE = 400V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage power dissipation.
   • Handle with care to avoid damage to the gate terminal.

2. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure the junction temperature does not exceed 175掳C to prevent thermal runaway.

3. Gate Drive:

   • Use a suitable gate driver circuit to ensure fast and reliable switching.
   • Apply the correct gate-emitter voltage (V_GE) to avoid overvoltage or undervoltage conditions.

4. Thermal Management:

   • Use appropriate cooling methods (e.g., heatsinks, fans) to maintain the device within its safe operating area.
   • Monitor the temperature of the heatsink and the ambient environment.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Avoid exposure to corrosive environments.

6. Testing:

   • Perform initial testing at low power levels to verify proper operation.
   • Use appropriate test equipment and follow safety guidelines.

7. Safety Precautions:

   • Always disconnect power before handling the device.
   • Use insulated tools and wear protective gear when working with high voltages.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)