Details
BUY MPJ-112-A-2 https://www.utsource.net/itm/p/12606785.html
| Parameter | Value/Description |
|---|---|
| Part Number | MPJ-112-A-2 |
| Type | Junction Isolation Phototransistor |
| Supply Voltage (V) | 5.0 |
| Forward Current (IF) | 20 mA |
| Peak Pulse Current | 100 mA |
| Wavelength (位p) | 880 nm |
| CTR (Current Transfer Ratio) | Min 20%, Typ 50% at IF = 5mA, VCE=5V |
| Operating Temperature | -40掳C to +85掳C |
| Storage Temperature | -40掳C to +100掳C |
| Package Type | DIP-4 |
| Lead Finish | SnPb |
Instructions for Use:
- Installation: Ensure that the device is installed in a way that it avoids mechanical stress on the leads. Follow standard procedures for soldering and handling sensitive electronic components.
- Power Supply: The device operates with a supply voltage of 5.0V. Ensure that the power supply is stable and within specified limits.
- Current Handling: Do not exceed the forward current (IF) of 20 mA or peak pulse current of 100 mA to prevent damage to the component.
- Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C. Avoid exposing the device to temperatures outside this range for prolonged periods.
- Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
- Storage: Store in a dry environment within the temperature range of -40掳C to +100掳C.
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