Details

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BUY P8080A https://www.utsource.net/itm/p/12606788.html

Parameter	Description	Value
Part Number	P8080A	-
Type	Photodiode	-
Material	Silicon	-
Spectral Range	400 nm to 1100 nm	-
Peak Sensitivity	850 nm	-
Active Area	0.8 mm2	-
Reverse Voltage	Maximum Reverse Voltage (VR)	30 V
Dark Current	Maximum Dark Current (ID) at 25°C	1 nA
Response Time	Typical Response Time (τr)	1 μs
Capacitance	Capacitance (C) at 0 V	10 pF
Operating Temperature	-40°C to +85°C	-
Storage Temperature	-65°C to +150°C	-
Package Type	TO-46 Metal Can	-
Lead Finish	Tin Plated	-

Instructions for Use

1. Mounting:

   • Ensure that the photodiode is mounted in a clean, dry environment.
   • Use a heat sink or thermal compound if high power dissipation is expected.

2. Biasing:

   • Apply reverse bias voltage up to the maximum specified (30 V).
   • For optimal performance, use a bias voltage that is appropriate for your application.

3. Handling:

   • Handle the photodiode with care to avoid damage to the active area.
   • Use ESD (Electrostatic Discharge) protection when handling the device.

4. Wiring:

   • Connect the anode to the positive terminal and the cathode to the negative terminal.
   • Ensure that all connections are secure and free from corrosion.

5. Testing:

   • Test the photodiode in a controlled environment to ensure it meets the required specifications.
   • Use a light source with a known intensity and wavelength to calibrate the photodiode.

6. Storage:

   • Store the photodiode in a dry, cool place away from direct sunlight.
   • Avoid exposure to high humidity and extreme temperatures.

7. Safety:

   • Do not exceed the maximum ratings specified in the table.
   • Follow all safety guidelines and regulations when handling and using the photodiode.

(For reference only)