Details

---

BUY 2SK416STR https://www.utsource.net/itm/p/12606793.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source breakdown voltage	BVdss	Vds = 0, Id = -1mA			450	V
Gate-source breakdown voltage	BVgss	Vgs = 0, Ig = 卤1mA			卤30	V
Gate threshold voltage	Vth	Id = -1mA	-4	-2.5	-1	V
Maximum drain current	Id	Vds = -10V		-80		mA
Transconductance	Gfs	Vgs = -4V, Id = -10mA		2.5		S
Input capacitance	Ciss	Vds = -15V, f = 1MHz		600		pF
Output capacitance	Coff	Vds = -15V, f = 1MHz		10		pF
Reverse transfer capacitance	Crss	Vds = -15V, f = 1MHz		20		pF

Instructions for Use:

1. Biasing and Operating Voltage:

   • Ensure the gate-source voltage (Vgs) does not exceed the specified maximum of 卤30V to avoid damaging the device.
   • The drain-source voltage (Vds) should be kept below 450V to prevent breakdown.

2. Temperature Considerations:

   • Operate within the temperature range specified by the manufacturer to ensure reliable performance and longevity.

3. Handling Precautions:

   • Handle with care to avoid static damage; use proper ESD protection practices.
   • Avoid mechanical stress on the leads which can affect electrical characteristics.

4. Mounting:

   • Follow recommended mounting procedures to ensure good thermal contact and electrical connections.
   • Proper heatsinking is crucial if operating at high power levels or in high ambient temperatures.

5. Testing:

   • When testing the device, adhere to the conditions specified in the parameter table to obtain accurate measurements.
   • Use appropriate test equipment and settings to avoid overstressing the device.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat to maintain device integrity.

(For reference only)