Details

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BUY FQD1N80 https://www.utsource.net/itm/p/12606818.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)				800	V
Gate-Source Voltage	V(GS)		-15		15	V
Continuous Drain Current	I(D)	Tc = 25掳C		8		A
Pulse Drain Current	I(D pul)	Tc = 25掳C, tp = 10ms		32		A
Gate Charge	Q(G)	V(GS) = 10V		46		nC
Input Capacitance	Ciss	V(DS) = 0V, f = 1MHz		1700		pF
Output Capacitance	Coss	V(DS) = 400V, f = 1MHz		420		pF
Reverse Transfer Capacitance	Crss	V(DS) = 400V, V(GS) = 0V, f = 1MHz		1280		pF
RDS(on)	R(DS(on))	V(GS) = 10V, Id = 2.5A		1.9		惟

Instructions for Use:

1. Handling Precautions: The FQD1N80 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
2. Mounting: Ensure the device is securely mounted on a heatsink if operating near maximum current ratings to prevent overheating.
3. Voltage Ratings: Do not exceed the maximum drain-source voltage (V(DS)) of 800V or gate-source voltage (V(GS)) of 卤15V.
4. Current Ratings: Continuous operation should not exceed the continuous drain current (I(D)) rating of 8A at case temperature (Tc) of 25掳C.
5. Gate Drive: For optimal performance, drive the gate with a voltage between 10V and 15V. Ensure the gate driver can supply sufficient current to charge/discharge the gate capacitance quickly.
6. Pulse Operation: For pulse applications, ensure the pulse duration does not exceed 10ms and the peak current does not exceed 32A.
7. Capacitance Considerations: Account for input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in circuit design, especially in high-frequency applications.
8. Thermal Management: Monitor the junction temperature to ensure it remains within safe limits. Use appropriate cooling methods as necessary.

(For reference only)