Details

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BUY 50HF120 https://www.utsource.net/itm/p/12606827.html

Parameter	Value	Unit
Part Number	50HF120	-
Type	N-channel MOSFET	-
VDS (Max)	50	V
VGS (Max)	卤20	V
ID (Continuous)	120	A
RDS(on)	4.5	m惟
Power Dissipation (Max)	310	W
Junction Temperature	-55 to +175	掳C
Package	TO-247	-

Instructions for Use:

1. Installation:

   • Ensure the MOSFET is mounted on a suitable heatsink to manage heat dissipation, especially under high current conditions.
   • Follow proper torque specifications for screw mounting to avoid damage.

2. Handling Precautions:

   • Handle with care to prevent electrostatic discharge (ESD) damage. Use ESD-safe tools and surfaces.
   • Avoid exposing the device to temperatures outside its operational range.

3. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Operate within the specified junction temperature range to ensure reliability.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against ESD.

(For reference only)