Details

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BUY IR2113S https://www.utsource.net/itm/p/12606829.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Supply Voltage (High Side)	VHB	10	-	60	V
Supply Voltage (Low Side)	VSB	10	-	20	V
Gate Drive Output Voltage (High Side)	VOH	-	14.5	-	V	VHB = 15V, IOUT = 1A
Gate Drive Output Voltage (Low Side)	VOL	-	14.5	-	V	VSB = 15V, IOUT = 1A
Gate Drive Output Current (Source)	IOUT(S)	-	2	-	A	VHB = 15V, VOH = 15V
Gate Drive Output Current (Sink)	IOUT(K)	-	2	-	A	VSB = 15V, VOL = 0V
Input Threshold Voltage (IN/SD)	VTH	1.8	2.7	3.6	V	VDD = 15V, IIN = 0.1mA
Input Hysteresis Voltage (IN/SD)	VHYS	0.4	0.7	1.0	V	VDD = 15V, IIN = 0.1mA
Propagation Delay Time (High Side)	td(H)	-	60	-	ns	VHB = 15V, VDD = 15V, CL = 1000pF
Propagation Delay Time (Low Side)	td(L)	-	50	-	ns	VSB = 15V, VDD = 15V, CL = 1000pF
Maximum Operating Junction Temperature	TJ(MAX)	-	-	150	掳C
Storage Temperature Range	TSTG	-40	-	150	掳C

Instructions for Use:

1. Power Supply Connections:

   • Connect the high-side supply voltage (V_HB) to the appropriate pin.
   • Connect the low-side supply voltage (V_SB) to the appropriate pin.
   • Ensure that both supply voltages are within the specified range.

2. Input Signal:

   • Apply the input signal (IN) to control the gate drive outputs.
   • The input signal should be within the threshold voltage range to ensure proper operation.

3. Output Configuration:

   • Connect the high-side output (HO) to the gate of the high-side MOSFET.
   • Connect the low-side output (LO) to the gate of the low-side MOSFET.
   • Ensure that the gate resistors are appropriately sized to match the gate capacitance of the MOSFETs.

4. Bootstrap Capacitor:

   • For high-side operation, use a bootstrap capacitor between the HO and VS pins.
   • The bootstrap capacitor should be selected based on the switching frequency and current requirements.

5. Shutdown Pin (SD):

   • The shutdown pin can be used to disable the driver by pulling it low.
   • When the SD pin is high, the driver operates normally.

6. Thermal Management:

   • Ensure adequate heat dissipation to keep the junction temperature below the maximum operating temperature.
   • Use a heatsink if necessary, especially in high-power applications.

7. Protection Circuits:

   • Implement overvoltage and overcurrent protection circuits to safeguard the driver and connected components.
   • Consider using clamping diodes to protect against voltage spikes.

8. Layout Considerations:

   • Keep the layout compact to minimize parasitic inductances and capacitances.
   • Use short and wide traces for power and ground connections to reduce inductance.

By following these instructions, you can ensure reliable and efficient operation of the IR2113S gate driver.

(For reference only)