Details

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BUY BC877 https://www.utsource.net/itm/p/12606844.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	50	V
Collector-Base Voltage	VCBO	-	-	60	V
Emitter-Base Voltage	VEBO	-	-	6	V
Collector Current	IC	-	-	100	mA
Base Current	IB	-	-	20	mA
DC Current Gain	hFE	75	300	800	-	IC = 2mA, VCE = 5V
Transition Frequency	fT	-	300	-	MHz
Power Dissipation	PD	-	-	350	mW	TC = 25掳C
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heat sink if operating at high power levels to maintain junction temperature within specified limits.
2. Biasing: Proper biasing of the base-emitter junction is critical for optimal performance and stability. Refer to application notes for detailed biasing circuits.
3. Handling: Handle with care to avoid damage from electrostatic discharge (ESD). Use proper anti-static precautions during handling and assembly.
4. Testing: When testing or measuring parameters, ensure that all voltages and currents do not exceed the maximum ratings listed in the table.
5. Storage: Store in a dry environment within the temperature range specified by TSTG to prevent degradation of performance characteristics.

(For reference only)