Details

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BUY FQPF5N60C. https://www.utsource.net/itm/p/12606845.html

Below is the parameter table and instructions for the FQPF5N60C, a 600V N-Channel Power MOSFET.

Parameter Table

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS			600		V
Gate-Source Voltage	VGSS		-20		20	V
Continuous Drain Current	ID	TC = 25掳C		5.0		A
		TC = 100掳C		3.5		A
Pulse Drain Current (tp = 10 渭s)	ID(m)	TC = 25掳C		48		A
Gate Charge	QG			75		nC
Input Capacitance	Ciss	f = 1 MHz		1420		pF
Output Capacitance	Coss	f = 1 MHz		99		pF
Reverse Transfer Capacitance	Crss	f = 1 MHz		127		pF
Threshold Voltage	VGS(th)	ID = 250 渭A	2.0	4.0	6.0	V
On-State Resistance	RDS(on)	VGS = 10 V, ID = 5 A		1.1		惟
Total Power Dissipation	PTOT	TC = 25掳C		115		W
Junction to Case Thermal Resistance	R胃JC			1.7		掳C/W
Junction to Ambient Thermal Resistance	R胃JA			62		掳C/W
Operating Junction Temperature	TJ		-55		150	掳C
Storage Temperature Range	Tstg		-55		150	掳C

Instructions

1. Handling Precautions:

   • ESD Protection: The FQPF5N60C is sensitive to electrostatic discharge (ESD). Use proper ESD protection equipment and follow ESD handling procedures.
   • Heat Sinking: Ensure adequate heat sinking to maintain the junction temperature within the specified limits, especially during high power dissipation.

2. Mounting:

   • Torque Specification: Apply the recommended torque to the mounting screws to ensure good thermal contact with the heatsink.
   • Thermal Interface Material: Use a high-quality thermal interface material (TIM) between the device and the heatsink to improve thermal performance.

3. Operating Conditions:

   • Voltage Limits: Do not exceed the maximum drain-source voltage (V_DSS) or gate-source voltage (V_GSS).
   • Current Limits: Ensure that the continuous drain current (I_D) and pulse drain current (I_D(m)) do not exceed the specified values.
   • Temperature Limits: Keep the operating junction temperature (T_J) within the specified range to avoid thermal damage.

4. Testing:

   • Test Conditions: Refer to the test conditions provided in the parameter table for accurate measurements.
   • Gate Drive: Use appropriate gate drive circuits to ensure reliable operation. Avoid excessive gate drive voltages and currents.

5. Storage:

   • Temperature and Humidity: Store the device in a dry environment within the specified storage temperature range.
   • Packaging: Keep the device in its original packaging until ready for use to prevent physical damage.

By following these parameters and instructions, you can ensure optimal performance and reliability of the FQPF5N60C.

(For reference only)