Details

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BUY 2SA490. https://www.utsource.net/itm/p/12606878.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	80	V	Maximum voltage between collector and emitter with base open
Collector-Base Voltage	VCBO	-	-	90	V	Maximum voltage between collector and base with emitter open
Emitter-Base Voltage	VEBO	-	-	5	V	Maximum voltage between emitter and base with collector open
Collector Current	IC	-	-	2	A	Maximum continuous collector current
Power Dissipation	PD	-	-	45	W	Maximum power dissipation at Tc = 25掳C
Junction Temperature	Tj	-	-	150	掳C	Maximum junction temperature
Storage Temperature Range	Tstg	-55	-	150	掳C	Operating temperature range

Instructions for Use:

1. Mounting: Ensure the transistor is securely mounted to prevent mechanical damage. Use appropriate heat sinks if operating near maximum power dissipation limits.
2. Biasing: Proper biasing of the base-emitter junction is critical for optimal performance. Avoid exceeding the specified base-emitter voltage (VEBO).
3. Heat Management: Monitor junction temperature to ensure it does not exceed 150掳C. Adequate cooling measures should be in place especially under high-power conditions.
4. Voltage Ratings: Do not exceed the maximum ratings for collector-emitter (VCEO), collector-base (VCBO), and emitter-base (VEBO) voltages to avoid damaging the device.
5. Current Handling: Keep the collector current within the specified limits to prevent overheating or damage.
6. Storage Conditions: Store in a dry environment within the storage temperature range (-55掳C to 150掳C) to maintain reliability.

(For reference only)