Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | Non-Volatile Memory | 1 Mbit (128K x 8) UV-Erasable PROM |
| Package | Plastic Dual In-Line Package (PDIP) | 28-Pin |
| Operating Voltage (Vcc) | Supply Voltage Range | 4.5V to 5.5V |
| Standby Current (Typical) | Power Consumption in Standby Mode | 10 渭A |
| Active Current (Typical) | Power Consumption in Active Mode | 25 mA |
| Access Time (Typical) | Time from Address Valid to Data Valid | 120 ns |
| Data Retention | Guaranteed Data Retention Time | 10 years |
| Programming Voltage (Vpp) | Voltage for Programming | 12.5V to 13.0V |
| Erase Time | Time Required for Full Chip Erase | 30 minutes (UV Exposure) |
| Operating Temperature Range | Temperature Range for Normal Operation | -40掳C to +85掳C |
| Storage Temperature Range | Temperature Range for Storage | -65掳C to +150掳C |
| Endurance | Number of Program/Erase Cycles | 1,000 cycles |
Instructions for Use
Power Supply:
- Ensure that the Vcc supply voltage is within the specified range of 4.5V to 5.5V.
- Connect the Vss pin to ground.
Programming:
- Apply the programming voltage (Vpp) of 12.5V to 13.0V to the appropriate pin.
- Set the address lines to the desired memory location.
- Set the data lines to the data you want to program.
- Apply a write pulse to the write enable (WE) pin.
- Verify the programmed data by reading back the memory location.
Erasing:
- Expose the device to UV light for at least 30 minutes to erase the entire chip.
- Ensure the UV light source has a wavelength of approximately 253.7 nm.
Reading:
- Set the address lines to the desired memory location.
- The data will be available on the data lines after the access time (typically 120 ns).
Handling:
- Handle the device with care to avoid static discharge, which can damage the device.
- Store the device in a dry environment to prevent moisture damage.
Mounting:
- Ensure proper alignment of the device during mounting to avoid mechanical stress on the pins.
- Follow recommended soldering profiles to avoid thermal damage.
Testing:
- Perform functional testing after programming and erasing to ensure the device operates correctly.
- Use a memory tester or equivalent equipment to verify the integrity of the programmed data.
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