Details

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BUY SPW47N60C3/47N60C3 https://www.utsource.net/itm/p/12606888.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)				600	V
Gate-Source Voltage	V(GS)		-15		20	V
Continuous Drain Current	I(D)	Tc = 25掳C		47		A
		Tc = 100掳C		31.9		A
Pulse Drain Current	I(D pul)	tp = 10 渭s, Tc = 25掳C		188		A
Power Dissipation	P(Total)	Tc = 25掳C		300		W
Junction Temperature	Tj		-55		150	掳C
Storage Temperature	Tstg		-55		150	掳C

Instructions for SPW47N60C3/47N60C3:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid static damage; use ESD protection.

2. Mounting:

   • Ensure proper heat sinking when operating at high currents to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to ensure good thermal and electrical contact.

3. Biasing:

   • Apply gate voltage carefully within the specified range (-15V to +20V) to prevent gate oxide damage.
   • Ensure that the drain-source voltage does not exceed 600V to avoid breakdown.

4. Current Limitation:

   • Do not exceed the continuous or pulse current ratings as specified. For continuous operation, ensure the current does not exceed 47A at 25掳C case temperature or 31.9A at 100掳C case temperature.
   • For pulse operation, ensure the pulse duration is limited to 10 渭s and the peak current does not exceed 188A.

5. Thermal Considerations:

   • Monitor the junction temperature to ensure it remains below 150掳C. Proper cooling mechanisms may be required depending on the application.
   • Avoid operating in environments where the storage temperature exceeds -55掳C to 150掳C.

6. Testing and Troubleshooting:

   • Regularly check the device parameters under operational conditions to ensure they remain within specifications.
   • If the device fails, inspect for overheating, overcurrent, or overvoltage conditions that might have caused the failure.

(For reference only)