Details

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BUY 2SC1735 https://www.utsource.net/itm/p/12606889.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	60	V	Maximum voltage between collector and emitter with base open
Collector-Base Voltage	VCBO	-	-	60	V	Maximum voltage between collector and base with emitter open
Emitter-Base Voltage	VEBO	-	-	5	V	Maximum voltage between emitter and base with collector open
Collector Current	IC	-	-	1.5	A	Continuous collector current
Power Dissipation	PD	-	-	280	mW	Maximum power dissipation at Tc = 25掳C
Forward Current Transfer Ratio	hFE	100	300	700	-	Current gain (DC)
Transition Frequency	fT	-	300	-	MHz	Frequency at which hfe is reduced to unity
Storage Temperature Range	Tstg	-55	-	150	掳C	Operating temperature range

Instructions for Use:

1. Mounting: Ensure the transistor is mounted on a suitable heatsink if operating near its maximum power dissipation limits.
2. Biasing: Proper biasing of the base-emitter junction is crucial for stable operation. Use resistors to set the base current accurately.
3. Protection: Include protection diodes across inductive loads to prevent voltage spikes from damaging the transistor.
4. Operating Conditions: Operate within the specified temperature and voltage ranges to avoid damage or performance degradation.
5. Handling: Handle with care to avoid static damage; use anti-static precautions when installing or testing the device.

(For reference only)