Details

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BUY 29F080TC-90 https://www.utsource.net/itm/p/12606890.html

Parameter	Description	Value	Unit
Device	Device Type	29F080TC-90	-
Technology	Flash Memory Technology	CMOS	-
Density	Memory Density	1 Mbit	-
Organization	Memory Organization	128K x 8	-
Vcc Range	Supply Voltage Range	2.7 to 3.6	V
Vpp Range	Programming Voltage Range	Not Required	-
Operating Temperature	Operating Temperature Range	-40 to +85	掳C
Access Time	Access Time (Typical)	90	ns
Package	Package Type	TSSOP-24	-
Write Cycle	Write Cycle Time (Typical)	2	ms
Erase Cycle	Erase Cycle Time (Typical)	1	s
Endurance	Endurance (Typical)	100,000	Cycles
Data Retention	Data Retention (Minimum)	10	Years
Standby Current	Standby Current (Typical)	1	渭A
Active Current	Active Current (Typical)	15	mA

Instructions:

1. Power Supply:

   • Connect Vcc to the supply voltage within the range of 2.7V to 3.6V.
   • Connect Vss to ground.

2. Programming:

   • The device does not require a separate programming voltage (Vpp).
   • Use the standard write cycle time of 2 milliseconds for programming operations.

3. Erase:

   • Use the standard erase cycle time of 1 second for erasing operations.
   • Ensure that the device is properly powered during the erase cycle.

4. Access Time:

   • The typical access time is 90 nanoseconds. Ensure that your system can handle this speed.

5. Temperature Range:

   • Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.

6. Current Consumption:

   • The standby current is typically 1 渭A, and the active current is typically 15 mA. Design your power management accordingly.

7. Endurance and Data Retention:

   • The device is rated for 100,000 write/erase cycles and can retain data for at least 10 years under normal operating conditions.

8. Handling:

   • Handle the device with care to avoid static damage. Use proper ESD protection measures.

9. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.

(For reference only)