Details

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BUY 2SD1061-R https://www.utsource.net/itm/p/12606892.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	-	-	80	V
Emitter-Base Voltage	Vebo	-	-	5	V
Collector Current	Ic	-	-	3	A
Base Current	Ib	-	-	0.3	A
Power Dissipation	Ptot	-	-	65	W
Junction Temperature	Tj	-40	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C
Thermal Resistance	RthJC	-	2.5	-	掳C/W

Instructions for Use:

1. Mounting:

   • Ensure that the device is mounted on a suitable heat sink to maintain the junction temperature within the specified range.
   • Use thermal compound between the device and the heat sink to improve thermal conductivity.

2. Biasing:

   • Apply the base current (Ib) carefully to avoid exceeding the maximum base current rating.
   • Ensure that the collector-emitter voltage (Vce) does not exceed 80V to prevent breakdown.

3. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Do not exceed the maximum power dissipation (Ptot) of 65W.

4. Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

5. Storage:

   • Store the device in a dry, cool place within the storage temperature range of -55掳C to 150掳C.

6. Testing:

   • Test the device under controlled conditions to verify its performance before integrating it into the final application.

(For reference only)