N82S137N

N82S137N


Specifications
Details

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Parameter Description Value Unit
Device Type High-Speed CMOS 8K x 8 Static RAM
Supply Voltage (VCC) Operating supply voltage range 4.5 to 5.5 V
Standby Current Current during standby mode 10 渭A
Active Current Current during active mode 200 mA
Access Time Time required for read/write operations 15 ns
Output Drive Capability Maximum output drive capability 卤25 mA
Operating Temperature Range of temperatures for operation -40 to +85 掳C
Package Type Type of package PDIP, SOIC

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (VCC) is within the specified range of 4.5V to 5.5V to avoid damage.
  2. Installation:

    • Carefully insert the N82S137N into the socket or circuit board ensuring correct orientation and alignment with the pin configuration.
  3. Handling:

    • Handle with care to prevent electrostatic discharge (ESD) damage. Use proper ESD protection equipment.
  4. Operation:

    • For optimal performance, maintain operating temperature between -40掳C and +85掳C.
    • Ensure that all connections are secure and free from corrosion or oxidation.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
  6. Testing:

    • Before integrating into a larger system, test the component for functionality using standard testing procedures for static RAM.
  7. Documentation:

    • Refer to the datasheet for detailed timing diagrams and specific application notes related to this device.
(For reference only)

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